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| Eudyna GaN-HEMT 30W Preliminary FEATURES High Voltage Operation : VDS=50V High Power : 46.5dBm (typ.) @ P3dB High Efficiency: 60%(typ.) @ P3dB Linear Gain : 12dB(typ.) @ f=2700MHz Broad Frequency Range : 800 to 2800MHz Proven Reliability EGN030MK High Voltage - High Power GaN-HEMT DESCRIPTION Eudyna's GaN-HEMT offers high efficiency, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation, and gives you higher gain. This device target applications are low current and wide band applications for high voltage. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition Tc=25oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item Symbol VDS IGF IGR Tch DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature r P im l e Condition RG=15 RG=15 Vp VGDO P3dB d GL Rth a in Rating Limit 50 <6.1 >-2.2 200 120 -5 56.25 -65 to +175 250 y r Unit V V W oC oC Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition min. Pinch-Off Voltage Gate-Drain Breakdown Voltage 3dB Gain Compression Power Drain Efficiency Linear Gain Thermal Resistance VDS=50V IDS=11mA IGS=- 5.6 mA VDS=50V IDS(DC)=200mA f=2.7GHz Channel to Case 11.0 -1.0 45.5 Limit Typ. Max. -2.0 -350 46.5 60 12.0 3.0 -3.5 4.0 Unit V V dBm % dB oC/W Edition 1.0 June 2005 1 EGN030MK High Voltage - High Power GaN-HEMT Output Power vs. Frequency VDS=50V IDS(DC)=200mA Output Power and Drain Efficiency vs. Input Power VDS=50V IDS(DC)=200mA f=2.7GHz 50 48 46 Output Power [dBm] Output Power [dBm] 50 48 46 44 42 40 38 36 34 32 30 Output Power 100 90 80 Drain Efficiency [%] 70 60 50 40 Drain Effi. 30 20 10 0 Input power [dBm] 44 42 40 38 36 34 32 30 2.50 2.55 2.60 2.65 2.70 2.75 2.80 2.85 2.90 Frequency [GHz] Pin=22dBm Pin=34dBm r P Pin=26dBm Pin=38dBm im l e Pin=30dBm a in y r 21 23 25 27 29 31 33 35 37 39 Power Derating Curve 60 50 40 30 20 10 0 0 50 100 150 200 250 300 Case Temperature [ ] Total Power Dissipation [W] 2 EGN030MK High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V IDS=200mA f=0.5 to 5.5 GHz Zl = Zs = 50 ohm Marker : 2.7GHz Freq [GHz] 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 +250j 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0 -250j 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 0 4.4 4.5 4.6 4.7 4.8 4.9 5.0 S12 5.1 5.2 S21 5.3 5.4 5.5 S11 MAG 0.885 0.882 0.882 0.882 0.884 0.884 0.883 0.883 0.880 0.876 0.872 0.867 0.864 0.864 0.861 0.866 0.868 0.871 0.876 0.881 0.878 0.873 0.886 0.887 0.882 0.881 0.880 0.876 0.869 0.869 0.865 0.861 0.856 0.848 0.846 0.839 0.833 0.825 0.811 0.805 0.790 0.783 0.766 0.754 0.746 0.736 0.740 0.752 0.767 0.810 0.859 ANG -170.7 -173.9 -176.4 -178.5 179.6 177.8 176.3 174.8 173.9 172.7 171.9 171.5 171.3 171.3 171.6 171.8 171.7 171.5 171.4 170.8 170.3 169.2 168.3 166.9 166.0 164.5 162.8 161.1 159.4 157.9 156.3 154.7 152.9 151.1 149.5 148.1 146.5 144.6 142.6 140.2 137.1 134.4 130.9 127.4 122.2 117.5 112.1 106.0 98.5 90.2 79.9 S21 MAG ANG 8.614 63.5 6.953 56.2 5.755 50.0 4.860 44.1 4.124 38.6 3.576 33.4 3.118 28.6 2.739 24.0 2.427 20.0 2.160 16.1 1.941 12.5 1.732 9.6 1.575 7.5 1.443 5.4 1.340 3.7 1.259 1.8 1.195 -0.4 1.138 -2.5 1.090 -4.9 1.051 -7.3 1.013 -9.8 0.983 -12.3 0.961 -14.9 0.936 -17.6 0.919 -20.3 0.897 -23.0 0.893 -25.9 0.877 -28.7 0.869 -31.5 0.868 -34.6 0.868 -37.8 0.864 -40.8 0.873 -44.2 0.884 -47.6 0.898 -51.0 0.910 -54.6 0.942 -58.5 0.974 -62.2 0.995 -66.4 1.041 -71.3 1.077 -76.6 1.143 -82.0 1.199 -88.3 1.272 -94.5 1.348 -102.2 1.429 -110.2 1.526 -118.7 1.617 -127.9 1.708 -138.2 1.846 -149.8 1.936 -162.7 S12 MAG ANG 0.010 -4.5 0.009 -8.0 0.009 -8.5 0.008 -9.5 0.007 -6.3 0.006 -2.4 0.006 1.3 0.006 5.5 0.006 15.7 0.005 21.3 0.005 26.3 0.006 32.6 0.006 38.4 0.007 44.4 0.007 47.8 0.009 47.8 0.009 53.1 0.009 58.2 0.011 59.4 0.011 60.1 0.013 66.8 0.014 64.0 0.016 62.7 0.017 59.1 0.018 61.6 0.020 59.7 0.023 58.8 0.026 57.5 0.027 56.4 0.030 55.4 0.033 51.6 0.035 49.6 0.039 45.6 0.042 42.9 0.046 39.5 0.051 36.2 0.056 33.6 0.061 30.4 0.068 26.0 0.075 21.3 0.084 16.7 0.095 12.3 0.106 5.2 0.119 0.2 0.135 -7.3 0.152 -14.2 0.172 -22.6 0.197 -31.8 0.226 -42.2 0.257 -53.1 0.296 -65.6 S22 MAG 0.429 0.475 0.517 0.555 0.589 0.617 0.643 0.661 0.676 0.690 0.694 0.698 0.703 0.712 0.724 0.742 0.767 0.782 0.798 0.810 0.818 0.827 0.832 0.840 0.842 0.843 0.847 0.843 0.838 0.838 0.832 0.831 0.822 0.814 0.804 0.797 0.787 0.769 0.753 0.736 0.715 0.697 0.672 0.650 0.623 0.592 0.561 0.526 0.487 0.443 0.395 ANG -110.7 -118.1 -124.5 -130.2 -135.4 -140.4 -144.8 -148.7 -152.5 -155.6 -158.6 -160.6 -162.5 -163.8 -164.8 -166.2 -167.6 -169.6 -171.6 -173.6 -175.5 -177.2 -179.3 178.8 177.0 175.4 173.3 171.3 169.4 167.4 165.2 162.7 160.4 158.0 155.4 152.4 149.6 146.3 143.0 139.6 135.9 131.9 127.6 122.5 117.4 111.6 104.9 96.3 86.3 73.2 55.5 +50j +25j 10 25 +100j +10j 2.7GHz 50 0 2.7GHz -10j -25j -50j -100j r P +90 2.7GHz im l e a in y r 180 20 Scale for |S21| 2.7GHz 0.2 Scale for |S 12| -90 3 |
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